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 LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
MMUN2211LT1 Series MMUN2211LT1
SERIES
3 1 2
CASE 318, STYLE 6 SOT-23 (TO-236AB)
* Simplifies Circuit Design * Reduces Board Space and Component Count * The SOT-23 package can be soldered using wave or reflow. The *
modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the13 inch/10,000 unit reel.
PIN 3 PIN 1 BASE (INPUT) R1 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND)
R2
MARKINGDIAGRAM
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C Symbol VCBO VCEO IC PD Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/C
A6x
M
A6x = Device Marking x M = A - L(See Page 2) = Date Code
ORDERING INFORMATION
Device Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
DEVICE MARKING AND RESISTOR VALUES
Device MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 Marking A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L A8M A8R A8U R1(K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 R2(K) 10 22 47 47 1.0 2.2 4.7 47 47 47 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
MMUN2211S-1/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
THERMAL CHARACTERISTICS
Rating Thermal Resistance - Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RJA TJ, Tstg TL Value 625 -65 to +150 260 10 Unit C/W C C Sec
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 ICBO ICEO IEBO - - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 4.0 0.1 - - nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (Note 2.)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 160 160 - 60 100 140 140 350 350 5.0 15 30 200 150 140 350 350 - - - - - - - - - - - - - - - 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/ MMUN2235LT1/MMUN2238LT1 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
VCE(sat)
MMUN2211S-2/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 3.)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) VOL MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2213LT1 MMUN2241LT1 VOH - - - - - - - - - - - - - - 4.9 - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k )
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k ) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k ) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 MMUN2238LT1 Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1/MMUN2238LT1 MMUN2241LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 1.54 70 0.8 0.17 - - 0.8 0.055 0.38 0.038
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 1.0 0.21 - - 1.0 0.1 0.47 0.047
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 2.88 130 1.2 0.25 - - 1.2 0.185 0.56 0.056
k
Resistor Ratio
R1/R2
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
MMUN2211S-3/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) PD, POWER DISSIPATION (MILLIWATTS) 250 1 IC/IB = 10 TA = -25C 25C 75C
200
0.1
150
100 RJA= 625C/W
0.01
50
0 -50
0
50
100
150
0.001
0
20
40
60
80
TA, AMBIENT TEMPERATURE (5C)
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C -25C 100 Cob, CAPACITANCE (pF) 3 4
Figure 2. VCE(sat) vs. IC
f = 1 MHz lE = 0 A TA = 25C
2
1
10
1
10 IC, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
100 IC, COLLECTOR CURRENT (mA) 75C Vin, INPUT VOLTAGE (VOLTS) 10 TA = -25C 10
Figure 4. Output Capcitance
25C
VO = 0.2 V
TA = -25C 25C 75C
1
1
0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10
0.001
0.1 0
Vin, INPUT VOLTAGE (VOLTS)
40 10 20 30 IC, COLLECTOR CURRENT (mA)
50
Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
MMUN2211S-4/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C
0.1
75C
25C 100
-25C
0.01
-
0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80
10 1 10 IC, COLLECTOR CURRENT (mA) 100
Figure 7. VCE(sat) vs. IC
4 Cob, CAPACITANCE (pF) f = 1 MHz lE = 0 A TA = 25C IC, COLLECTOR CURRENT (mA) 100
Figure 8. DC Current Gain
75C
25C TA = -25C
3
10
1
2
0.1
1
0.01 VO = 5 V 0 2 4 6 8 10 Vin, INPUT VOLTAGE (VOLTS)
0
0
10
20
30
40
50
0.001
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V
Figure 10. Output Current vs. Input Voltage
TA = -25C 10 75C 25C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
MMUN2211S-5/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = -25C 25C 1 75C
hFE, DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V TA = 75C 25C -25C
100
0.1
0.01 0 20 40 60 80 IC, COLLECTOR CURRENT (mA)
10 1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) vs. IC
1 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 100
Figure 13. DC Current Gain
75C 10
25C TA = -25C
Cob, CAPACITANCE (pF)
0.8
0.6
1
0.4
0.1
0.2
0.01 VO = 5 V 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10
0 0
10
20
30
40
50
0.001
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V
Figure 15. Output Current vs. Input Voltage
TA = -25C 25C 10 75C
1
0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 16. Input Voltage vs. Output Current
MMUN2211S-6/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 TA = -25C 25C 0.1 75C 300 VCE = 10 250 25C 200 -25C 150 100 50 0 TA = 75C
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
1
2
4
6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) vs. IC
4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz lE = 0 A TA = 25C IC, COLLECTOR CURRENT (mA) 100
Figure 18. DC Current Gain
75C
25C
TA = -25C 10
VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10
Figure 19. Output Capacitance
10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current vs. Input Voltage
TA = -25C
25C 75C 1
0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 21. Input Voltage vs. Output Current
MMUN2211S-7/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2232LT1
1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB =10 hFE, DC CURRENT GAIN TA = 75C 100 -25C 25C 1000 VCE = 10 V
0.1
TA = 75C 25C
-25C 0.01
10
0.001 4 8 12 16 20 24 28 IC, COLLECTOR CURRENT (mA)
1 0 25 50 75 100 125 IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) vs. IC
6 IC, COLLECTOR CURRENT (mA) 5 4 3 2 1 0 0 10 20 30 40 50 60 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz IE = 0 A TA = 25C 100 75C 10
Figure 23. DC Current Gain
VO = 5 V 25C
Cob, CAPACITANCE (pF)
1 TA = -25C
0.1
0.01 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance
10 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 75C 1 25C
Figure 25. Output Current vs. Input Voltage
0.1 0
10 20 IC, COLLECTOR CURRENT (mA)
30
Figure 26. Output Voltage vs. Input Current
MMUN2211S-8/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2233LT1
1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB = 10 hFE, DC CURRENT GAIN 75C 25C TA = -25C 1000
0.1
75C 25C TA = -25C
100
0.01
10
VCE = 10 V 1 2 7 12 17 22 27 32 1 10 IC, COLLECTOR CURRENT (mA) 100 IC, COLLECTOR CURRENT (mA)
0.001
Figure 27. VCE(sat) vs. IC
4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 60 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz IE = 0 A TA = 25C 100 IC, COLLECTOR CURRENT (mA) 75C
Figure 28. DC Current Gain
TA = -25C 10
1
0.1 25C 0 2 4 6 VO = 5 V 8
0.01 Vin, INPUT VOLTAGE (VOLTS)
Figure 29. Output Capacitance
10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS)
Figure 30. Output Current vs. Input Voltage
TA = -25C 25C 1 75C
0.1 0 12 18 6 24 IC, COLLECTOR CURRENT (mA) 30
Figure 31. Input Voltage vs. Output Current
MMUN2211S-9/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
FROM P OR OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT IN LOAD
Figure 33. Open Collector Inverter: Inverts the Input Signal
Figure 34. Inexpensive, Unregulated Current Source
MMUN2211S-10/11


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